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Metal‐Insulator Transition: 3D Local Manipulation of the Metal–Insulator Transition Behavior in VO2 Thin Film by Defect‐Induced Lattice Engineering

Qi Jia Jörg Grenzer Huabing He Wolfgang Anwand Yanda Ji Ye Yuan Kai Huang Tiangui You Wenjie Yu Wei Ren Xinzhong Chen Mengkun Liu Stefan Facsko Xi Wang Xin Ou

| First Published: 2018-04-23

3D local manipulation of metal‐insulator transition in VO2 is achieved by noble gas ion implantation, which is essential for the fabrication of highly integrated and tunable electronic or photonic devices, for example, metamaterials, field‐effect transistors, high‐density memory devices and optical manipulators. This is reported by Xin Ou and co‐workers in article number 1701268.

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