In article number 2100366, Yang Li and co-workers present an optoelectronic random access memory (RRAM) device for solving scalability and power consumption issues existing in traditional flash-based storage devices. In addition to excellent resistive switching behaviors, the optoelectronic RRAM device shows superior ultraviolet light-enhanced storage and in-computing abilities. This research provides an effective way for developing high-density storage and in-computing devices.

原文链接

https://onlinelibrary.wiley.com/doi/10.1002/aelm.202170023