hide

首页 / 封面设计

Black Phosphorous Photodetectors: Black Phosphorous/Indium Selenide Photoconductive Detector for Visible and Near‐Infrared Light with High Sensitivity (Advanced Optical Materials 12/2019)

Rui Cao Hui‐De Wang Zhi‐Nan Guo David K. Sang Li‐Yuan Zhang Quan‐Lan Xiao Yu‐Peng Zhang Dian‐Yuan Fan Jian‐Qing Li Han Zhang

论文插图 封面设计 | First Published: 2019-06-18

Photodetectors based on vertically stacked indium selenide (InSe) layers on top of layered black phosphorous (BP) have been devised by Zhi‐Nan Guo, Han Zhang and co‐workers (see article number 1900020). These vertical‐structure photodetectors possess a wide response range from visible to near‐infrared, and they exhibit a relatively fast response and high responsivity. In addition, the environmental degradation of BP can be inhibited to a certain extent by the InSe capping.

回到顶部

联系我们

  • 地址

    辽宁省沈阳市铁西区北一西路52甲号830-06

  • 热线电话

    13236639606 或 18809875865

  • QQ

    客服1:1114371869 客服2:2501950479 客服3:1114371777 客服4:2841761885

官方分享

辽公网安备21010602000232号

copyright © 2016 沈阳智研科技有限公司 版权所有网站建

沈阳网站建设:龙兴科技