Negative capacitance field‐effect transistors (NCFETs) achieve ultra‐low sub‐threshold swing through internal voltage amplification, stemming from the negative capacitance effect during the ferroelectric polarization switching process. In article number 1800231, Jianlu Wang and co‐workers review the theoretical and experimental results of NCFETs based on various gate structures and typical ferroelectrics. Novel NCFET structures, combined with 2D materials and FinFET, show great prospects for the future.